2N5088
2N5089
SILICON
NPN TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5088 and
2N5089 are silicon NPN transistors designed for low
level, low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
2N5088
35
2N5089
30
UNITS
V
25
V
30
VEBO
IC
4.5
50
mA
PD
TJ, Tstg
625
mW
-65 to +150
°C
Thermal Resistance
JA
200
°C/W
Thermal Resistance
JC
83.3
°C/W
ELECTRICAL
SYMBOL
ICBO
ICBO
CHARACTERISTICS: (TA=25°C)
TEST CONDITIONS
VCB=20V
VCB=15V
2N5088
MIN
MAX
50
2N5089
MIN
MAX
-
IEBO
VEB=3.0V
IEBO
BVCBO
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
V
UNITS
nA
-
-
-
50
nA
-
50
-
50
nA
VEB=4.5V
-
100
-
100
nA
IC=100μA
35
-
30
-
V
BVCEO
IC=1.0mA
30
-
25
-
V
VCE(SAT)
IC=10mA, IB=1.0mA
VCE=5.0V, IC=10mA
-
0.5
-
0.5
V
-
0.8
-
0.8
V
300
900
400
1.2K
hFE
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
hfe
fT
VCE=5.0V,
VCE=5.0V,
Cob
Cib
VCB=5.0V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
NF
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz
-
VBE(ON)
hFE
hFE
350
-
450
-
300
-
400
-
IC=1.0mA, f=1.0kHz
350
1.4K
450
1.8K
IC=0.5mA, f=20MHz
50
-
50
-
-
4.0
-
4.0
pF
-
15
-
15
pF
3.0
-
2.0
dB
MHz
R1 (20-June 2016)
2N5088
2N5089
SILICON
NPN TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (20-June 2016)
w w w. c e n t r a l s e m i . c o m
2N5088
2N5089
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (20-June 2016)
w w w. c e n t r a l s e m i . c o m
2N5088
2N5089
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (20-June 2016)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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